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| 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675(Z) 1st. Edition Aug. 1998 Features * High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, D = 57 %min. (f = 836.5MHz) * Compact package capable of surface mounting Outline UPAK 3 2 1 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2922 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 10 6 0.7 1.4 3 150 -45 to +150 Unit V V A A W C C 1. PW 10ms, duty cycle 50 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min -- -- 0.4 -- -- 31 57 Typ -- -- -- 27 13 -- -- Max 100 5.0 1.2 -- -- -- -- Unit A A V pF pF dBm % Test Conditions VDS = 10 V, VGS = 0 VGS = 6V, VDS = 0 I D = 3mA, VDS = 5V VGS = 2V, VDS = 0, f = 1MHz VDS = 5, VGS = 0, f = 1MHz VDS = 4.7V, f =836.5Mhz Pin = 23dBm VDS = 4.7V, f =836.5Mhz Pin = 23dBm Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Drain Rational Note: 1. Marking is "HX". I GSS VGS(off) Ciss Coss Pout D 2 2SK2922 Main Characteristics Maximum Channel Power Dissipation Curve Pch (W) 4 5 Typical Output Characteristics Pulse Test 6V 5.5 V 5V 4.5 V Channel Power Dissipation I D (A) 3 4 3 4V 3.5 V Drain Current 2 2 3V 2.5 V 1 1 1.5 V 2V V GS = 1 V 0 50 100 150 Tc (C) 200 0 Case Temperature 6 2 3 4 5 1 Drain to Source Voltage V DS (V) Typical Transfer Characteristics Forward Transfer Admittance |y fs | (S) 1.0 Tc = -25C 25C 0.6 75C 10 3 1 Forward Transfer Admittance vs. Drain Current (A) 0.8 25C Tc = -25C Drain Current ID 0.3 0.1 75C 0.4 0.2 V DS = 5 V Pulse Test 0.5 1.0 1.5 2.0 V GS (V) 2.5 0.03 0.01 0.001 0.003 0.01 0.3 V DS = 5 V Pulse Test 0.1 0.3 1 0 Gate to Source Voltage Drain Current I D (A) 3 2SK2922 Drain to Source Saturation Voltage vs. Drain Current 1.0 Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source Saturation Voltage VDS(sat) (V) 1 0.3 0.1 Gate to Source Cutoff Voltage vs. Ambient Temperature 25C 0.8 ID = 10 m A 75C 0.6 1 mA 0.1 mA 0.03 0.01 Tc = -25C 0.4 0.003 0.001 0.001 0.003 0.01 0.03 0.2 0 -25 V DS = 5 V 0 25 50 75 100 125 V GS = 6 V Pulse Test 0.1 0.3 1 Drain Current I D (A) Ambient Temperature Ta (C) Input Capacitance vs. Gate to Source Voltage 35 Output Capacitance Coss (pF) Input Capacitance Ciss (pF) Output Capacitance vs. Drain to Source Voltage 100 50 V GS = 0 f = 1 MHz 30 20 10 5 25 20 V DS = 0 f = 1 MHz 15 -6 -2 0 2 4 6 -4 Gate to Source Voltage VGS (V) 2 1 0.1 0.2 0.5 1 2 5 10 Drain to Source V DS (V) 4 2SK2922 Reverse Transfer Capacitance vs. Drain to Gate Votage 10 V GS = 0 f = 1 MHz 5 Output Power Po (W) 2.0 2.5 D Po 1.5 Output Power, Drain Rational vs. Input Power 100 Reverse Transfer Capacitance Crss (pF) 60 1.0 V DS = 4.7 V I DO = 150 mA f = 836.5MHz 100 200 300 400 40 2 0.5 20 1 0.1 0.2 0.5 1 2 5 (V) 10 0 0 500 Drain to Gate Voltege V Input power Pin (mW) Drain Rational D (%) 80 5 2SK2922 Package Dimensions Unit: mm 4.5 0.1 1.0 1.5 1.5 3.0 0.8 min 0.53 max 0.48 max 1 2 3 2.5 0.1 4.25 max 4 0.4 1.8 max 1.5 0.1 0.44 max 0.44 max Hitachi Code EIAJ JEDEC UPAK SC-62 -- 6 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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